Abstract: “Radial core/shell hetero field effect metal-oxide-semiconductor structures, especially Ge/Si core/shell structure, have recently been extensively studied both experimentally and theoretically, promising novel electronic and optoelectronic devices. An analytic electrostatic potential solution to this hetero-structure is developed in this letter. The analytical expression of the electrostatic potential is derived out from the basic Poisson Boltzmann equation in the core/shell layers under classical device physics. Potential and electric field distribution across the radial of the core/shell structure are analyzed and discussed in the detail, much different from their single component counterpart. The analytic solution presented in this letter has provided useful insight for device scientists and integrated circuit engineers to understand the device physics and further develop compact circuit models of nano-wire field effect transistors with the Ge/Si core/shell hetero-structure for possi”

Keywords: CMOS scaling, nanowire device, integrated circuit, hetero-junction structure, device physics, simulation and modeling