Abstract: “A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DC- PHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS fromSilvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for high- performance digital device applications. Due to the schottky behavior of InGaP, good pinch-off and saturation characteristics, high drain saturation current, large and linear transconductance and excellent microwave characteristics are obtained. The studied dual channel HEMT with delta-doped sheet densities and proper layers; prove promise for electronic applications.”

Keywords: Dual channel, Pseudomorphic HEMT, δ-doped sheet, schottky behaviour, InGaP