Abstract: “The consumer demands on having multi-functional wireless communication devices have driven current mobile handset to be more complex than it has ever been before. In particular, radio frequency (RF) front-end has evolved to adapt with multi-standards terminals. Thus, by having integrated switches and resonators on the same chip may be considered as a compact solution. In this paper, the design and simulation of RF-CMOS SPST switch is presented. The switch exhibits insertion loss of 1.15-dB and 1.155-dB at 850MHz and 1.125GHz respectively. On the other hand, the isolation is > 22dB in this frequency range while its P1dB is > 20dBm. Pre and post layout of the switch is included in this paper to observe the effect of parasitic capacitance in the layout design.”

Keywords: Complementary metal-oxide semiconductor (CMOS), surface acoustic wave (SAW) resonator, microelectromechanical systems (MEMS), single pole single throw (SPST), radio frequency