Abstract: “The organic thin film transistor (OTFT) has been attractive as soft material for IoT devices, however there are some problems to overcome. One is the exitance of carrier traps at the interface between the organic semiconductor and the oxide film of the OTFT. The cause of this carrier trap is the presence of OH groups generated by the adsorption of water molecules in the air and O atoms on the surface of the oxide film. As a method for removing this OH group, generally, the formation of SAM films on the oxide layer has been attempted, but there are disadvantages such as requiring dense film forming conditions and spending a long time for the film formation. In this study, we have tried to remove OH group and suppress the generation of additional carrier trap by surface treatment of gate insulation film in plasma nitridation process. From the results of TDS measurement and C-V measurement, it was confirmed that OH group on the surface of the gate insulating film can be removed and additi”

Keywords: Surface, treatment, gate, insulating, film, organic