OVERCOMING MALICIOUS READ/WRITE REQUESTS IN INTERNET FILE SYSTEMS
Published In: 2ND INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTING, CONTROL AND NETWORKING
Author(s): GABRIEL MIZRAHI , GADI HABER , YOSI BEN ASHER
Abstract: Hashing of data blocks is a common approach in peer-to-peer and Internet based distributed file systems as a way to simulate a virtual hard disk over a set of servers. We consider the case where a malicious adversary attempts to overload a server assuming that this adversary ―knows‖ how the underlying hashing scheme works. We overcome this problem by using Universal hashing a known theoretical solution. In this work we how to port such a complex hashing scheme in real implementations of Internet based file systems. In this respect our work also contributes to the well known problem of VOD (video on demand) over the Internet. The implemented system (IFS) supports cooperative caching and for concurrent read/write operations it supports Weak-Consistency. Our results suggest that Universal hashing based distributed file systems can be extremely efficient for driving Internet file systems and file systems for large clusters.
- Publication Date: 29-Aug-2015
- DOI: 10.15224/978-1-63248-073-6-13
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A COMPARATIVE ANALYSIS OF PERFORMANCE GAIN OF 7- NM FINFET OVER PLANER CMOS
Published In: 2ND INTERNATIONAL CONFERENCE ON ADVANCES IN COMPUTING, CONTROL AND NETWORKING
Author(s): JAMAL UDDIN AHMED , ASIF KHAN , SADMAN SHOUMIK KHAN , SARAH NAHAR CHOWDHURY
Abstract: FinFET has been contemplated as a seemly substitute for the conventional CMOS at the nano-scale regime owing to the projection for application in the integrated circuits fabrication due to its extraordinary properties like improved channel controllability, high ON/OFF current ratio and reduced short-channel effect. In this paper, circuit simulations of 7-nm FinFET and planer CMOS are comprehensively investigated showing a 34.92% and 28.79% increased drain current in 7-nm Fin-FET compared to the existing 22-nm and equivalent 7-nm planer CMOS respectively. A detailed simulation study evaluating the performance of the proposed design is presented exhibiting a 2X increase in drive strength with the increment of fins. Fin thickness of 2.725 nm along with a height of 10.9 nm has been used resulting in an 8X reduction in gate area which is the smallest 7-nm Fin-FET structure yet developed. The indiscriminate variations of the characteristics obtained in various simulations lead to a culminati
- Publication Date: 29-Aug-2015
- DOI: 10.15224/978-1-63248-073-6-14
- Views: 0
- Downloads: 0