CLOUD COMPUTING : AN INDUSTRIAL VIEW
Published In: INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRONICS, ELECTRICAL AND COMPUTER SCIENCE ENGINEERING
Author(s): ALKA ARORA , MADHAVI DHINGRA
Abstract: Is cloud computing the savior of business? Is it a threat to data security? Does it signal the demise of the corporate IT function entirely? These are some of the questions in the current scenario. Cloud computing is a young phenomenon, and it is suffering through the growing pains typical of its age. Although the upside of cloud computing is considerable, numerous challenges lie ahead. This paper discuss about all the benefits of cloud computing, along with the challenges faced by the industries and software companies. It also presents solutions to some of the major challenges of cloud computing according to their needs.
- Publication Date: 09-Jul-2012
- DOI: 10.15224/978-981-07-2950-9-9873
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- Downloads: 0
PARAMETER EXTRACTION AND ANALYSIS OF PENTACENE THIN FILM TRANSISTOR WITH DIFFERENT INSULATORS
Published In: INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRONICS, ELECTRICAL AND COMPUTER SCIENCE ENGINEERING
Author(s): ANURADHA YADAV , NISHANT TRIPATHI , POORNIMA MITTAL , Y. S. NEGI
Abstract: This paper presents both analytical modeling and simulations based on finite element method of Pentacene Thin Film Transistors or Organic Thin Film transistors (PTFTs/OTFTs). Analytical modeling approach is introduced by using conventional transistor equations and finite element method using ATLAS two dimensional numerical device simulators. Both the methods shows a good agreement of output characteristic and parameters with experimental results. Further simulation is performed for top contact OTFT devices with different insulator materials while pentacene is used as organic semiconductor (OSC) material. A large variation has been observed for different insulators which insight the importance for right selection of the material during fabrication. It has been observed that the best results can be obtained for Hafnium oxide (HfO2) due to highest dielectric constant. Parameters such as current on-off ratio drain current and transconductance shows a variation of 85% or more for different
- Publication Date: 09-Jul-2012
- DOI: 10.15224/978-981-07-2950-9-9874
- Views: 0
- Downloads: 0