Abstract: This paper is mainly showing the comparison between Field Plated and Non Field Plated AlGaN/GaN High Electron Mobility Transistor (HEMT) under different biasing conditions. It also shows the effect of the field plate structure on the RF performance of the HEMT device. The field plate structure increases the breakdown voltage of the device at high frequencies by the local modulation of the electric field. Because of the field plate there is introduction of additional feedback capacitance from drain to gate. This type of capacitor also has effect on the RF performance of the device, mainly at high frequency values. So here the investigation on the above along with the comparison with field plated and non field plated HEMT device is presented systematically.

• Publication Date: 13-Jun-2013
• DOI: 10.15224/978-981-07-6935-2-01
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Abstract: In this paper, the fabrication of 16-copper electrode based electrical impedance tomography (EIT) system is fabricated. EIT is a tool for imaging the interior permittivity distribution of an object (stone/tumor) by measuring voltage at the surface. This method is useful for detecting the shape, size and position of unwanted lumps within a specified area. In order to understand the proposed work, a simulation study using Finite Element Method (FEM) based Multiphysics software has been performed, in which we have imaged perfectly the shape, position and sizes of both the regular and irregular shaped objects situated within a specified phantom area in a 2D plane. Simultaneously, we have developed a real-time system consists of 16 copper electrodes (placed equidistantly) detect non-conducting like plastic container in normal saline solution. We have injected a constant current to the phantom boundary and the surface potentials are being measured using neighbouring method. We have collected

• Publication Date: 13-Jun-2013
• DOI: 10.15224/978-981-07-6935-2-02
• Views: 0
• Downloads: 0