Abstract: Distributed Generation (DG) is used to improve the system reliability. However, DG Contribution in fault current may cause the loss of the existing protection coordination. This problem can drastically deteriorate the system reliability and it is more serious and complicated when there are several DG Sources in the System. Hence, the above conflict in reliability aspect unavoidably needs a detailed investigation before the installation or enhancement of DG is done. In this Research work it is proposed to model of composite DG fault current to find the threshold that existing protection coordination is lost. Cases of protection misco-ordination are to be described, together with their consequences. And attempt will be made to prevent reliability degradation from recloser fuse misco-ordination due to Distributed Generation.

• Publication Date: 13-Jun-2013
• DOI: 10.15224/978-981-07-6935-2-11
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Abstract: Minority carrier charge storage time of a uniformly doped Schottky Barrier Diode (SBD) is studied here. When barrier height is low, SBD acts as a majority carrier device. But for a high barrier SBD both majority and minority carrier currents contribute to total current. In the past, a number of research works on uniformly doped SBD have been done but in this work an analytical expression for minority carrier charge profile for a high barrier SBD is derived in a new approach. Both drift and diffusion components of majority and minority carrier currents are considered. Neglecting recombination in the epitaxial layer, a second order nonlinear differential equation is solved to obtain for all level of injections. Once minority carrier charge profile is known, stored excess minority carrier charge, storage time and injection ratio are obtained. Present work represents that minority carrier charge profile, minority carrier charge storage time and injection ratio depend on bias voltage, dopin

• Publication Date: 13-Jun-2013
• DOI: 10.15224/978-981-07-6935-2-12
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