FALL DETECTION SYSTEM USING COMBINATION ACCELEROMETER AND GYROSCOPE
Published In: INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRONIC DEVICES AND CIRCUITS
Author(s): AFSHIN NABILI , BINH Q. TRAN , QUOC T. HUYNH , SU V. TRAN , UYEN D. NGUYEN
Abstract: Falling is a common accident and the most significant cause of injury for elderly person. This study investigates the methodology to identify falls from normal Activities of Daily Living (ADLs). In this study, a wireless sensor system (WSS), based on accelerometer and gyroscope, is placed at the centre of the chest to collect real-time fall data. The WSS contains a set of ADXL345 (3-axis digital accelerometer sensor), ITG3200 (3-axis digital gyroscope sensor), MCU LPC17680 (ARM 32-bit cortex M3), and Wi-Fi module RN13. Experiment protocols consisting of four types of falls such as forward fall, backward fall, and side way fall (left and right) along with normal gait involved 324 tests on 18 human subjects. The results from the experiment shows the system and algorithm could distinguish between falling and ADLs with an accuracy of 99.382%.
- Publication Date: 05-May-2013
- DOI: 10.15224/978-981-07-6261-2-56
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DESIGNING OF GRAPHENE NANORIBBON BASED STATIC RANDOM ACCESS MEMORY
Published In: INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRONIC DEVICES AND CIRCUITS
Author(s): ABHISHEK GUNE , ANU GUPTA
Abstract: In the post silicon era as the silicon reaches its fundamental scaling limits graphene nanoribbons is expected to take over and thus continue the Moore’s law about the diminishing size of transistors. Graphene nanoribbons facilitates high speed low power switching applications. Low and high field mobilities of the graphene nanoribbons are found to be higher than the CNTs and CMOS keeping the same unit cell. Such properties of graphene nanoribbons are used in the paper to define RAM memory using GNRs as an effective substitute to CMOS and CNTFETs cache memory. Graphene nanoribbon crossbars are used as the basic programmable devices. This 2-D arrangement of GNRs creates programmable diodes at intersection of each horizontal and vertical GNR rod thus opening up new avenues for building high speed memory and digital devices. The graphene nanoribbons based memory is better than the SRAM in terms of speed, density and performance metrics as well. GNR based memory would be operating in the 10
- Publication Date: 05-May-2013
- DOI: 10.15224/978-981-07-6261-2-57
- Views: 0
- Downloads: 0