Abstract: The simulated model calculates the phase matching angle for a parallel isotropic slab made of Zinc Telluride (ZnTe), Cadmium Telluride (CdTe), Gallium Arsenide (GaAs) and Zinc Selenide (ZnSe) having thickness 't' at a given wavelength of 10.6 μm by determining the wave-vector mismatch. The model also generates the status of fulfillment of Total Internal Reflection (TIR) inside the semiconductor slab. The simulated results indicate phase matching angle of 0.9034 rad for a slab thickness of 800 μm in case of ZnTe and 0.5457 rad for CdTe taking the slab thickness as 500 μm. The phase matching angle for ZnSe is 1.481 rad and that of GaAs is 0.6984 rad for a slab of thickness 800 μm for both the materials. For all the cases, the TIR condition is found satisfying

• Publication Date: 17-Jun-2012
• DOI: 10.15224/978-981-07-2579-2-125
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Abstract: We analytically describe quasi-phase matched second-harmonic generation in the mid-IR region in a parallel isotropic semiconductor slab made of Zinc Telluride (ZnTe) and Cadmium Telluride (CdTe) using total internal reflection quasi phase matching technique. The simulated results indicate conversion efficiencies of 4.08% (centered at 8.495 μm) and 15.83% (centered at 9.341 μm) in a 400 μm thick, 10-mm-long slab of ZnTe and CdTe respectively. The losses due to surface roughness, Goos-Hänchen shift and absorption of the slab have been considered in the analysis. The effect of variation in the angle of incidence has been studied for both the materials.

• Publication Date: 17-Jun-2012
• DOI: 10.15224/978-981-07-2579-2-129
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