FACIAL EXPRESSION RECOGNITION USING LOCAL GABOR BINARY PATTERN(LGBP) AND PRINCIPLE COMPONENT ANALYSIS (PCA)
Published In: INTERNATIONAL CONFERENCE ON ADVANCES IN ENGINEERING AND TECHNOLOGY
Author(s): SHALU GUPTA , SONIT SINGH
Abstract: Facial Expression Recognition is one of the active research area in the field of Human Machine Interaction (HMI) because of its several applications such as human emotion analysis, stress level and lie detection. In this paper, an algorithm for facial expression recognition has been proposed which integrate the Local Binary Patterns (LBP), Gabor filter and Principal Component Analysis (PCA). The proposed technique has been applied on JAFFE database. The comparative analysis on the basis of average recognition rate has been performed for each individual and integrated approach. The results shows highest recognition rate while combining LGBP and PCA, which is 87.5. The results indicate that when we integrate LBP, Gabor filter and PCA, then it provides high recognition rate.
- Publication Date: 25-May-2014
- DOI: 10.15224/978-1-63248-028-6-02-29
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74V HIGH FIGURE-OF-MERIT LATERAL TRENCH GATE POWER MOSFET ON INGAAS
Published In: INTERNATIONAL CONFERENCE ON ADVANCES IN ENGINEERING AND TECHNOLOGY
Author(s): MUKESH BADIYARI , YASHVIR SINGH
Abstract: In this paper, a power lateral trench-gate metal oxide-semiconductor field-effect transistor (MOSFET) on InGaAs is proposed. The device consists of two gates placed vertically in separate trenches built in the drift region on both sides of P body region. Under ON-state, two channels are created in P-body which carry current simultaneously to enhance performance of the device. The trench structure of the proposed device causes reduced-surface-field effect in the drift region to improved breakdown voltage. The device design also provides a reduction in cell pitch and higher drift region doping to decrease the on-resistance. Two-dimensional numerical simulations are performed to analyze and compare the performance of proposed device with that of the conventional MOSFET. The proposed MOSFET structure gives 80% higher breakdown voltage, 17% lower specific on-resistance, 25% reduction in cell pitch and 3.8 times improvement in figure-of-merit over the conventional device.
- Publication Date: 25-May-2014
- DOI: 10.15224/978-1-63248-028-6-02-30
- Views: 0
- Downloads: 0